mt110cb - t1 compl i ant rohs module type diode maximum ratings symbol item conditions values units i d output current(d.c.) tc= 85 110 a i fsm surge forward current t=10ms tvj =45 2250 a i 2 t circuit fusing consideration 25000 a 2 s visol isolation breakdown voltage(r.m.s) a.c.50hz;r.m.s.;1min 3000 v tvj operating junction temperature - 40 to + 125 tstg storage temperature - 40 to + 125 mt mounting torque to terminals(m 5 ) 3 15% nm ms to heatsink(m 6 ) 5 15% nm weight module approxima tely ? 100 g thermal characteristics symbol item conditions values units r th(j - c) thermal impedance, m ax . junction to case 0. 14 /w rth(c - s ) thermal impedance, m ax . case to heatsink 0.10 /w electrical characteristics thyristor/diode modules v rrm / v d rm 8 00 to 1 8 0 0v i f av / i t av 11 0 a features ? international standard package ? high surge capability ? glass passivated chip ? simple mounting ? h e at transfer through aluminum oxide dbcceramic isolated metal baseplate ? ul recognized applied for file no. e36004 0 type v rrm / v d rm v rsm m t110cb08t1 m t110cb12t1 m t110cb16t1 mt110cb18t1 800v 1200v 1600v 1800v 900v 1300v 1700v 1900v circuit 1 3 2 4 5 applications ? power converters ? lighting control ? dc m otor c ontrol and drives ? h eat and temperature control symbol item conditions values units min. typ. max. v fm forward voltage drop, max. t=25 i f = 300 a 1.65 v i r rm repetitive peak reverse current, max. t vj =25 v rd =v rrm t vj =1 25 v rd =v rrm 0. 5 6 ma ma s - m 049 www. 21yangjie .com rev. 2 . 0 , 2 7 - may - 1 7 1
mt110cb - t1 compl i ant rohs r th(j - c) thermal impedance, m ax . junction to case 0.28 /w rth(c - s ) thermal impedance, m ax . case to heatsink 0.20 /w electrical characteristics symbol item conditions values units i tav average on - state current s ine 180 o ; tc= 85 110 a i tsm surge on - state current t vj =45 t=10ms, sine t vj = 125 t=10ms, sine 2250 1900 a i 2 t circuit fusing consideration t vj =45 t=10ms, sine t vj = 125 t=10 ms , sine 25000 18000 a2s viso l isolation breakdown voltage(r.m.s) a.c.50hz ;r.m.s.;1min 3000 v tvj operating junction temperature - 40 to +130 tstg storage temperature - 40 to + 125 mt mounting torque to terminals(m5) 3 15% nm ms to heatsink(m6) 5 15% nm di/dt critical rate of rise of on - state current t vj = t vjm , 2/3 v drm ,i g =500ma t r<0.5us,tp>6us 150 a/us dv/dt critical rate of rise of o ff - state voltage, min. t j = t vjm ,2/3 v drm linear voltage rise 1000 v/us a maximum allowable acceleration 50 m/ s 2 symbol item conditions values units min. typ. max. v t m peak on - s tate voltage, max . t=25 i t = 300 a 1.65 v i rrm / i drm repetitive peak reverse current, max. / repetitive peak o ff- state current, max. t vj =t vjm ,v r =v rrm ,v d = v drm 20 ma v to on state threshold voltage for power - loss calculations only (t vj =125 ) 0.9 v r t value of on - stat e slope resistance. max t vj =t vjm 2 m ? v gt gate trigger voltage, m ax . t vj =25 , v d =6v 3 v i gt gate trigger current, m ax . t vj =25 , v d =6v 150 ma v gd non - triggering gate voltage, m ax . t vj = 1 25 ,v d =2/3 v drm 0.25 v i gd non - triggerin g gate current , m ax . t vj = 1 25, v d =2/3 v drm 6 ma i l latching current, max. t vj =25 , r g = 33 ? 300 600 ma i h holding current, max. t vj =25 , v d =6v 150 250 ma tg d gate controlled delay time t vj =25 , i g = 1 a , di g /dt= 1 a/us 1 us tq circuit co mmutated turn - off time t vj =t vjm 100 us s - m 049 www. 21yangjie .com rev. 2 . 0 , 2 7 - may - 1 7 2
mt110cb - t1 compl i ant rohs performance curves fig1. power dissipation fig2 . forward current derating curve 0 i tav 50 100 a 150 200 w 150 100 50 p tav 0 rec.30 rec. 60 rec. 120 sin . 1 80 dc fig3. transient thermal impedance fig4. max non - repetitive forward surge cu rrent fig5. forward characteristics 0.001 t 0.01 0.1 1 10 s 100 0.5 0 / w 0.25 0 z th(j - c ) z th(j - s ) 10 100 ms 1000 50hz 2 5 00 a 1 250 0 0 v tm 0.5 1.0 1.5 v 2.0 300 a 200 100 i t 0 max . t yp . dc sin . 180 rec. 120 rec. 60 rec.30 i tavm 200 a 160 120 80 40 0 0 tc 50 100 130 25 - - -1 25 s - m 049 www. 21yangjie .com rev. 2 . 0 , 2 7 - may - 1 7 3
mt110cb - t1 compl i ant rohs package outline information case : t 1 dimensions in mm fig6. gate tri gger characteristics 1/2 mt 11 0 cb1 8 t1 v gd 125 i gd 125 i g t v g t 20v;20 ? 150 w ( 0 . 1 ms ) 100w(0. 5ms) 50w(8ms) pg(tp) 0.001 i g 0.01 0.1 1 10 a 100 100 v 10 1 v g 0.1 - 40 25 125 t vj y j s - m 049 www. 21yangjie .com rev. 2 . 0 , 2 7 - may - 1 7 4
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